1170 products were found matching your search for mosfet in 1 shops:

MOSFET driverMax. output current: 3.2 µADriver configuration: high-sideMSL: MSL 1 — unlimitedMax. operating temperature: +125°CMin. operating temperature: -40°CMax. input voltage: 75 VMin. input voltage: 5 VEnclosure size: SOT-23Mounting type: SMDNumber of pins: 6

PANASONIC Fotovoltaik-Relais mit MOSFET-Ausgang• Zur Steuerung von Low-Level-Signalen• Optische Kopplung für hohe Isolationsspannungen bis 5kV• Niedriger On-Widerstand• Geringer Off-State-Leckstrom• Keine Beschränkung bezüglich der Montage-RichtungTechnische MerkmaleSteuerstrom= 50mAton=0,5mstoff=0,2ms

MOSFET transistorN-channel40 V10 ASO-8

MOSFET transistorP-channel20 V4.3 ASO-8

International Rectifier's third generation HEXFETs use advanced processing techniques to achieve extremely low on-resistance per silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an extremely efficient and reliable device for use in a wide range of applications. The TO-220 package is generally preferred for all commercial/industrial applications with power dissipation up to approximately 50 watts.The low thermal resistance and low cost of the TO-220 package contribute to its wide acceptance in the industry.Features• adavanced Process Technology• ultra Low On-Resistance• dual N-Channel MOSFET• surface Mount• available in Tape & Reel• dynamic dv/dt Rating• fast Switching

MOSFET transistorN/P-channel55 V4.7 A/3.4 ASO-8

MOSFET transistorN-channel30 V6.5 ASO-8

MOSFET transistorN/P-channel25 V3.5 A/2.3 ASO-8

MOSFET transistorN/P-channel30 V3.5 A/2.3 ASO-8

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Park is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dessipation levels up to 1.5 watts are possible in typical surface mount applications.Features• dynamic dv/dt rating• surface mount (IRFR0320)• Repetitive avalanche rated• straight lead (IRFU0320)• available in tape & reel• fast switching• ease of paralleling

International Rectifier's third generation HEXFETs use advanced processing techniques to achieve extremely low on-resistance per silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an extremely efficient and reliable device for use in a wide range of applications. The TO-220 package is generally preferred for all commercial/industrial applications with power dissipation up to approximately 50 watts.The low thermal resistance and low cost of the TO-220 package contribute to its wide acceptance in the industry.Features• dynamic dv/dt assessment• repeated avalanche assessed• fast switching• simple parallel switching• simple drive requirements

Features• advanced Process Technology• key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications• low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications• low QG for Fast Response• high Repetitive Peak Current Capability for Reliable Operation• short Fall & Rise Times for Fast Switching• 175°C Operating Junction Temperature for Improved Ruggedness• repetitive Avalanche Capability for Robustness and Reliability• Class-D Audio Amplifier 300W-500W (Half-bridge)

Transistor SMD N-FET SOT-23 100 V 0.17 A

Power MOSFET

10Amps, 400Volts, 0.55 OHM, N-CHANNEL POWER MOSFET The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.Features• 10A, 400V, RDS(ON)(0.55?)• single Pulse Avalanche Energy Rated• rugged - SOA is Power Dissipation Limited • fast Switching Speeds • linear Transfer Characteristics • high Input Impedance

MOSFET transistorN/P-channel30 V4 A/3 ASO-8

MOSFET transistorN-channel20 V5.2 ASO-8

Package: SOT-23polarity: NDrain-voltage: 55 VDrain-current: 2.1 Apower: 1.25 Wtemperature range: -55 … +175 °C

IRFB4115PBF , HEXFETPower MOSFETBenefits• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness• Fully Characterized Capacitance and Avalanche SOA• Enhanced body diode dV/dt and dI/dt Capability• Lead Free• RoHS Compliant, Halogen-FreeApplications• High Efficiency Synchronous Rectification in SMPS• Uninterruptible Power Supply• High Speed Power Switching• Hard Switched and High Frequency Circuits

Third Generation HEXFET® from International Rectifier provide the designer with the best combination of fast switching ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 con tribute to its wide acceptance throughout the industry.Features• dynamic dv/dt rating• advanced Process Technology• logic-level gate drive • RDS (on) specified at Vgs= 4V & 5V• fast Switching• ease of paralleling • simple drive requirements