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Extreme ultraviolet lithography (EUVL) is the principal lithography technology-beyond the current 193-nm-based optical lithography-aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists. This book covers the fundamental and latest status of all aspects of EUVL used in the field. Since 2008, when SPIE Press published the first edition of EUVL Lithography, much progress has taken place in the development of EUVL as the choice technology for next-generation lithography. In 2008, EUVL was a prime contender to replace 193-nm-based optical lithography in leading-edge computer chip making, but not everyone was convinced at that point. Switching from 193-nm to 13.5-nm wavelengths was a much bigger jump than the industry had attempted before. It brought several difficult challenges in all areas of lithography-light source, scanner, mask, mask handling, optics, optics metrology, resist, computation, materials, and optics contamination. These challenges have been effectively resolved, and several leading-edge chipmakers have announced dates, starting in 2018, for inserting EUVL into high-volume manufacturing. This comprehensive volume comprises contributions from the world's leading EUVL researchers and provides the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. This book is intended for people involved in one or more aspects of EUVL, as well as for students, who will find this text equally valuable.

Extreme ultraviolet lithography (EUVL) is the principal lithography technology-beyond the current 193-nm-based optical lithography-aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists. This book covers the fundamental and latest status of all aspects of EUVL used in the field. Since 2008, when SPIE Press published the first edition of EUVL Lithography, much progress has taken place in the development of EUVL as the choice technology for next-generation lithography. In 2008, EUVL was a prime contender to replace 193-nm-based optical lithography in leading-edge computer chip making, but not everyone was convinced at that point. Switching from 193-nm to 13.5-nm wavelengths was a much bigger jump than the industry had attempted before. It brought several difficult challenges in all areas of lithography-light source, scanner, mask, mask handling, optics, optics metrology, resist, computation, materials, and optics contamination. These challenges have been effectively resolved, and several leading-edge chipmakers have announced dates, starting in 2018, for inserting EUVL into high-volume manufacturing. This comprehensive volume comprises contributions from the world's leading EUVL researchers and provides the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. This book is intended for people involved in one or more aspects of EUVL, as well as for students, who will find this text equally valuable.

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Master Extreme Ultraviolet Lithography TechniquesProduce high-density, ultrafast microchips using the latest EUVL methods. Written by industry experts, Extreme Ultraviolet Lithography details the equipment, materials, and procedures required to radically extend fabrication capabilities to wavelengths of 32 nanometers and below. Work with masks and resists, configure high-reflectivity mirrors, overcome power and thermal challenges, enhance resolution, and minimize wasted energy. You will also learn how to use Mo/Si deposition technology, fine-tune performance, and optimize cost of ownership. Design EUVL-ready photomasks, resist layers, and source-collector modulesAssemble optical components, mirrors, microsteppers, and scannersHarness laser-produced and discharge pulse plasma sourcesEnhance resolution using proximity correction and phase-shift Generate modified illumination using holographic elementsMeasure critical dimensions using metrology and scatterometry Deploy stable Mo/Si coatings and high-sensitivity multilayersHandle mask defects, layer imperfections, and thermal instabilities

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Master Extreme Ultraviolet Lithography TechniquesProduce high-density, ultrafast microchips using the latest EUVL methods. Written by industry experts, Extreme Ultraviolet Lithography details the equipment, materials, and procedures required to radically extend fabrication capabilities to wavelengths of 32 nanometers and below. Work with masks and resists, configure high-reflectivity mirrors, overcome power and thermal challenges, enhance resolution, and minimize wasted energy. You will also learn how to use Mo/Si deposition technology, fine-tune performance, and optimize cost of ownership. Design EUVL-ready photomasks, resist layers, and source-collector modulesAssemble optical components, mirrors, microsteppers, and scannersHarness laser-produced and discharge pulse plasma sourcesEnhance resolution using proximity correction and phase-shift Generate modified illumination using holographic elementsMeasure critical dimensions using metrology and scatterometry Deploy stable Mo/Si coatings and high-sensitivity multilayersHandle mask defects, layer imperfections, and thermal instabilities

This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirrors; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most promising lithographic technology for device fabrication at the 7-nm node.