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Description: The FR207 are Axial Silastic Guard Junction Standard Rectifier Diodes in a DO-15 package with a Maximum Repetitive Peak Reverse ...

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices -- power switching Schottky diodes and high temperature MESFETs -- are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

This revised and expanded edition emphasizes the basic concepts underlying the analysis and design of all discrete and integrated circuits. Contains an extensive treatment of semiconductor fundamentals; new material on power supplies and Schottky barrier diodes including useful models for diodes in avalanche breakdown and cutoff; a more accurate linear model for the biopolar transistor; the concept of the Early voltage; and an improved account of frequency response. Features two new chapters devoted to the operational amplifier and its specifications and the use of the op-amp, with a number of its important applications such as voltage references, comparators, differentiators and intergrators. Many of the examples and all of the problems are new.

This revised and expanded edition emphasizes the basic concepts underlying the analysis and design of all discrete and integrated circuits. Contains an extensive treatment of semiconductor fundamentals; new material on power supplies and Schottky barrier diodes including useful models for diodes in avalanche breakdown and cutoff; a more accurate linear model for the biopolar transistor; the concept of the Early voltage; and an improved account of frequency response. Features two new chapters devoted to the operational amplifier and its specifications and the use of the op-amp, with a number of its important applications such as voltage references, comparators, differentiators and intergrators. Many of the examples and all of the problems are new.

This revised and expanded edition emphasizes the basic concepts underlying the analysis and design of all discrete and integrated circuits. Contains an extensive treatment of semiconductor fundamentals; new material on power supplies and Schottky barrier diodes including useful models for diodes in avalanche breakdown and cutoff; a more accurate linear model for the biopolar transistor; the concept of the Early voltage; and an improved account of frequency response. Features two new chapters devoted to the operational amplifier and its specifications and the use of the op-amp, with a number of its important applications such as voltage references, comparators, differentiators and intergrators. Many of the examples and all of the problems are new.

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices -- power switching Schottky diodes and high temperature MESFETs -- are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.