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Description: The FR207 are Axial Silastic Guard Junction Standard Rectifier Diodes in a DO-15 package with a Maximum Repetitive Peak Reverse ...

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Description: The HC147 and CD74HCT147 are high speed silicon-gate CMOS devices and are pin-compatible with low power Schottky TTL (LSTTL). The ...

This revised and expanded edition emphasizes the basic concepts underlying the analysis and design of all discrete and integrated circuits. Contains an extensive treatment of semiconductor fundamentals; new material on power supplies and Schottky barrier diodes including useful models for diodes in avalanche breakdown and cutoff; a more accurate linear model for the biopolar transistor; the concept of the Early voltage; and an improved account of frequency response. Features two new chapters devoted to the operational amplifier and its specifications and the use of the op-amp, with a number of its important applications such as voltage references, comparators, differentiators and intergrators. Many of the examples and all of the problems are new.

When high speed logic devices are used, logic design cannot be separated from electrical and mechanical design. Digital design engineers faced with this and other difficulties involved in building high-speed, advanced Schottky and advanced CMOS systems have a practical reference in "CMOS/TTL Digital Systems Design". Based on a course given to all new Westinghouse circuit designers, this book includes a broad range of information on TTL and CMOS logic families and circuits, noise margin and sources of transient currents. Solid coverage of inductance and transient current effects, power distribution, synchronous design, clock distribution and signal interconnections is also included.

This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices -- power switching Schottky diodes and high temperature MESFETs -- are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

This revised and expanded edition emphasizes the basic concepts underlying the analysis and design of all discrete and integrated circuits. Contains an extensive treatment of semiconductor fundamentals; new material on power supplies and Schottky barrier diodes including useful models for diodes in avalanche breakdown and cutoff; a more accurate linear model for the biopolar transistor; the concept of the Early voltage; and an improved account of frequency response. Features two new chapters devoted to the operational amplifier and its specifications and the use of the op-amp, with a number of its important applications such as voltage references, comparators, differentiators and intergrators. Many of the examples and all of the problems are new.

This revised and expanded edition emphasizes the basic concepts underlying the analysis and design of all discrete and integrated circuits. Contains an extensive treatment of semiconductor fundamentals; new material on power supplies and Schottky barrier diodes including useful models for diodes in avalanche breakdown and cutoff; a more accurate linear model for the biopolar transistor; the concept of the Early voltage; and an improved account of frequency response. Features two new chapters devoted to the operational amplifier and its specifications and the use of the op-amp, with a number of its important applications such as voltage references, comparators, differentiators and intergrators. Many of the examples and all of the problems are new.

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices -- power switching Schottky diodes and high temperature MESFETs -- are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.