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Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

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Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

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This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge.

The foremost tutorial resource on the design of integrated voltage references, from theory to real-life practice. Voltage References covers the conceptual history and scope of practical design issues behind marketable and precision integrated voltage references. Effectual for professionals and understandable to novice designers, this book provides a familiarity with simple rudimentary design as well as precision state-of-the-art ones. Also covered are the design implications on SOC solutions, and low-voltage, low-power, and noisy mixed-signal environments. Enhanced with design examples, this volume will increase the reader's understanding of analog integrated circuits and the issues involved in producing commercially marketable and reliable devices. Primary topics include: The complete design of integrated voltage references Basics of voltage references, from diodes and current mirrors to temperature-dependent current references Design of zero-order, first-order, second-order, and higher-order reference circuits State-of-the-art curvature-correction techniques Practical design issues of integrated references, from error sources and circuit topologies to trimming circuits, package-shift effects, and characterization Voltage References is an essential book for IC designers, product engineers, test engineers, researchers, and professors, as well as undergraduate and graduate students.

The foremost tutorial resource on the design of integrated voltage references, from theory to real-life practice. Voltage References covers the conceptual history and scope of practical design issues behind marketable and precision integrated voltage references. Effectual for professionals and understandable to novice designers, this book provides a familiarity with simple rudimentary design as well as precision state-of-the-art ones. Also covered are the design implications on SOC solutions, and low-voltage, low-power, and noisy mixed-signal environments. Enhanced with design examples, this volume will increase the reader's understanding of analog integrated circuits and the issues involved in producing commercially marketable and reliable devices. Primary topics include: The complete design of integrated voltage references Basics of voltage references, from diodes and current mirrors to temperature-dependent current references Design of zero-order, first-order, second-order, and higher-order reference circuits State-of-the-art curvature-correction techniques Practical design issues of integrated references, from error sources and circuit topologies to trimming circuits, package-shift effects, and characterization Voltage References is an essential book for IC designers, product engineers, test engineers, researchers, and professors, as well as undergraduate and graduate students.

This book covers structural VLSI analog circuit design techniques for analog circuit blocks, such as operational amplifiers, PLL/DLL, bandgap reference, A/D D/A converters. Symmetry principles, structures, and methods are used to effectively mitigate VLSI PVT and other variations for better performance, functionality, and design productivity.

This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects. Readership: Researchers, academics, professionals, final-year undergraduate and graduate students in circuits & systems and electrical & electronic engineering.

This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects. Readership: Researchers, academics, professionals, final-year undergraduate and graduate students in circuits & systems and electrical & electronic engineering.

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for for devices and integrated circuits operating at high voltage, high frequency and high temperature. The second book in the EMIS Processing series explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics, etc.) and describes how these are integrated in device manufacture. The book should serve as an advanced tutorial and reference for those involved in applying the very latest technology emerging from university and commercial laboratories around the world. Also available:Silicon Wafer Bonding Technology for VLSI and MEMS Applications - ISBN 9780852960394SIMOX - ISBN 9780863413346The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including: -Power & Energy -Renewable Energy -Radar, Sonar & Navigation -Electromagnetics -Electrical Measurement -History of Technology -Technology Management

This book covers structural VLSI analog circuit design techniques for analog circuit blocks, such as operational amplifiers, PLL/DLL, bandgap reference, A/D D/A converters. Symmetry principles, structures, and methods are used to effectively mitigate VLSI PVT and other variations for better performance, functionality, and design productivity.