340 products were found matching your search for avalanche in 1 shops:

N-Channel Power MOSFETFEATURESAdvanced planar process100% avalanche testedFast switchingAPPLICATIONpower supply�Lighting

Ultra Fast Avalanche Sinterglass Diode Features• Controlled avalanche characteristic• Low forward voltage• Ultra fast recovery time• Glass passivated junction• Hermetically sealed package• AEC-Q101 qualified• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912ApplicationsVery fast rectification diode e.g. for switch modepower supplyMechanical DataCase: SOD-64 Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026Polarity: Color band denotes cathode endMounting Position: AnyWeight: approx. 858 mg

Ultra Fast Avalanche Sinterglass Diode Features• Controlled avalanche characteristic• Glass passivated junction• Hermetically sealed package• Low reverse current• Ultra fast soft recovery switching• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912Applications• TV• SMPS• Power feedback systemsMechanical Data• Case: SOD-64 • Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026• Polarity: Color band denotes cathode end• Mounting Position: Any• Weight: approx. 858 mg

Standard Avalanche Sinterglass Diode Features• Controlled avalanche characteristic• Glass passivated junction• Hermetically sealed package• Low reverse current• High surge current loading• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical Data:• Case: SOD-57 Sintered glass case• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026• Polarity: Color band denotes cathode end• Mounting Position: Any• Weight: approx. 369 mg

Ultra Fast Avalanche Sinterglass Diode SOD57, 200V, 2AFeatures• Controlled avalanche characteristic• Low forward voltage• Ultra fast recovery time• Glass passivated junction• Hermetically sealed package• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationsVery fast rectification diode e.g. for switch modepower supplyMechanical Data• Case: SOD-57 Sintered glass case• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026• Polarity: Color band denotes cathode end• Mounting Position: Any• Weight: approx. 369 mg

Ultra-fast avalanche sinterglass diode

Ultra Fast Avalanche Sinterglass Diode Features• Controlled avalanche characteristic• Low forward voltage• Ultra fast recovery time• Glass passivated junction• Hermetically sealed package• AEC-Q101 qualified• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912ApplicationsVery fast rectification diode e.g. for switch modepower supplyMechanical DataCase: SOD-64 Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026Polarity: Color band denotes cathode endMounting Position: AnyWeight: approx. 858 mg

Avalanche diode, FP-CASE, 1600 V, 2.3 A

Ultra Fast Avalanche Sinterglass Diode SOD57, 150V, 2AFeatures• Controlled avalanche characteristic• Low forward voltage• Ultra fast recovery time• Glass passivated junction• Hermetically sealed package• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationsVery fast rectification diode e.g. for switch modepower supplyMechanical Data• Case: SOD-57 Sintered glass case• Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026• Polarity: Color band denotes cathode end• Mounting Position: Any• Weight: approx. 369 mg

Standard Avalanche Sinterglass DiodeFEATURES:Glass passivated junctionHermetically sealed packageControlled avalanche characteristicsLow reverse currentHigh surge current loadingMaterial categorization:For definitions of compliance please see: www.vishay.com/doc?99912APPLICATIONS:Rectification, general purpose

N-Channel Power MOSFETFEATURES�Robust high voltage terminationAvalanche energy specifiedDiode is characterized for use in bridge circuitsSource to Drain diode recovery time comparable to a discrete fast recovery diode.APPLICATIONpower supply�Lighting�Charger

N-Channel Power MOSFETFEATURESAdvanced planar process100% avalanche testedLow RDS(ON) 8R (Typ.)Low gate charge typical @ 6.1 nC (Typ.)Low Crss typical @4.2pF (Typ.)APPLICATIONpower supply�Lighting�Charger

HEXFET® Power MOSFETfeaturesAdvanced Process Technologyultra low on resistance175°C Operating temperatureFast SwitchingRepetitive Avalanche Allowed up to Tjmaxlead freedescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.

N-Channel Power MOSFETFEATURESAdvanced planar process100% avalanche testedLow RDS(ON) 8R (Typ.)Low gate charge typical @ 6.1 nC (Typ.)Low Crss typical @4.2pF (Typ.)APPLICATIONpower supply�Lighting�Charger

Applications• high Efficiency Synchronous Rectification in SMPS• high Speed Power Switching• uninterruptible Power Supply• hard Switched and High Frequency CircuitsBenefits• improved Gate, Avalanche and Dynamic dV/dt Ruggedness• fully Characterized Capacitance and Avalanche SOA• enhanced body diode dV/dt and dI/dt Capability• Lead-Free

HEXFET power MOSFETFeaturesImproved gate, avalanche and dynamic dv/dt robustnessFully characterised capacity and avalanche SOAImproved dv/dt and dl/dt capability of the body diodeLead-freeApplicationsHighly efficient synchronous rectification in SMPSUninterruptible power supplyHigh-speed power switchingHard-wired high-frequency switching

N-channel 250V - 0.055O - 45A low gate charge STripFET™ Power MOSFETfeatures100% avalanche testedGate charge minimizedLow intrinsic capacitancesapplicationSwitching applications

N-Channel 250-V (D-S) MOSFETFEATURESHalogen-free According to IEC 61249-2-21 DefinitionPWM-Optimized TrenchFET® Power MOSFET100 % Rg TestedAvalanche TestedAPPLICATIONSPrimary Side Switch In:- Telecom Power Supplies- Distributed Power Architectures- Miniature Power Modules

Power MOSFETFEATURES- Low Gate Charge Qg results in Simple Drive Requirement- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness- Fully Characterized Capacitance and Avalanche Voltage and Current- Low trr and Soft Diode Recovery- Compliant to RoHS Directive 2002/95/ECAPPLICATIONS- Switch Mode Power Supply (SMPS)- Uninterruptible Power Supply- High Speed Power Switching- ZVS and High Frequency Circuit- PWM Inverters

Power MOSFETFEATURES- Low Gate Charge Qg Results in Simple Drive Requirement- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness- Fully Characterized Capacitance and Avalanche Voltage and Current- Enhanced Body Diode dV/dt Capability- Compliant to RoHS Directive 2002/95/ECAPPLICATIONS- Hard Switching Primary or PFC Switch- Switch Mode Power Supply (SMPS)- Uninterruptible Power Supply- High Speed Power Switching- Motor Drive