257 products were found matching your search for inchange in 1 shops:

Description• collector-Emitter Sustaining Voltage - : VCEO(SUS)= 250V (Min.) • high DC Current Gain - : hFE= 400(Min.)@IC= 10A • low Collector Saturation Voltage - : VCE (sat)= 1.0V(Max.)@ IC= 5.0AApplications• designed for general purpose amplifiers, low frequency switching and motor control applications.

Description:The MJ15016 is a -120V Silicon PNP Bipolar Complementary High Power Transistor. The transistor can also be used in power switching circuits such as relay or solenoid drivers, DC TO DC converters, inverters or for inductive loads requiring higher safe operating area.Features:- High current gain bandwidth- Safe operating area- Collector-base voltage (Vcbo = -200V)- Emitter-base voltage (Vebo = -7V)

These manufacturing notes apply to all of SiTime’s MEMS-based Silicon Timing products in Quad, Flat No-Lead (QFN) package, SOT23-5 package, 2.0 x 1.2mm SMD, and WLCSP. The information provided in this document is meant to assist customers with manufacturing set-up and use of SiTime products designed into systems. The materials used in the construction of SiTime’s products comply with Green standards. They are compliant to RoHS and REACH163 requirements. Material composition reports are on file and can be made available on request. No hazardous materials defined by OSHA are contained in the products and MSDS reports are not required when using SiTime’s products. All SiTime products have been qualified to JEDEC JESD47 requirements as they apply to the type of product and packaging of the product. Reliability reports are available upon request from your sales representative.

Description• with TO-3PN package • complement to type BDW84/84A/84B/84C/84D • DARLINGTON• high DC current gain Applicationsfor use in power linear and switching applications.

Description• with TO-3 package • DARLINGTON• high DC current gain • complement to type MJ3000/3001Applications• for use as output devices in complementary general purpose amplifier applications

Description• with TO-3 package• DARLINGTON• high current Applicationsdesigned for power amplification and switching applications.

Description• with TO-3 package• DARLINGTON• high current Applicationsdesigned for power amplification and switching applications.

Transistor PNP-Darl TO-3PN 120V 15A 150W

Description• with TO-3PN package • complement to type BDW84/84A/84B/84C/84D • DARLINGTON• high DC current gain Applicationsfor use in power linear and switching applications

Transistor 2SD 1548 NPN, 600 V, 10 A, TO-3PIS

Housing: TO-3PN

Transistor NPN-Darl TO-3 120 V, 50 A, 300 W

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching.Features• DC current gain classification• high voltage capability• low spread of dynamic parameters• very high switching speedApplications• electronic ballast for fluorescent lighting• switch mode power supplies

Transistor 2SD 1138 NPN, 200 V, 2 A, TO-220

INCHANGE Semiconductor Silicon PNP Darlington Power TransistorDescription:- Collector-emitter breakdown voltage...- V(BR)CEO= -120V(min.)- High direct current amplification -- hFE= 1000(min.)@IC= -20A- Low collector saturation voltage...- VCE (sat)= -3.0V(Max.)@ IC= -20A- Complement to NPN MJ11016applications:- Designed for use as output devices in complementaryamplifier applications.

INCHANGE Semiconductor Silicon NPN Darlington Power TransistorDescription:- Collector-emitter breakdown voltage- V(BR)CEO= 120V(min.)- High direct current amplification : hFE= 1000(min.)@IC= 20A- Low collector saturation voltage- VCE (sat)= 3.0V(Max.)@ IC= 20A- Addition to PNP MJ11015- Minimal lot-to-lot variations for robust device performance and reliable operationapplications:- Designed for use as output devices in complementaryamplifier applications.

Description• with TO-220C package• DARLINGTON • collector saturation voltage • complement to type TIP135/136/137 Applications• designed for general-purpose amplifier and low speed switching applications

The TIP142 is an Epitaxial-base NPN power transistor in monolithic Darlington configuration, mounted in TO-247 plastic package. It is intended for use in power linear and switching applications. The PNP complementary type is TIP147.Features• monolithic Darlington configuration• integrated antiparallel collector-emitter diodeApplications• linear and switching industrial equipment

Manufacturer: InchangeComplementary to MJE15031

Manufacturer: Inchange