779 products were found matching your search for semiconductor in 1 shops:

The G at the end of the type stands for glass-passivated

Super-fast rectifier diode, DO15, 400 V, 2 A

N-Channel Power MOSFETFEATURESAdvanced planar process100% avalanche testedFast switchingAPPLICATIONpower supply�Lighting

N-Channel Power MOSFETFEATURESLow RDS(ON) to minimize conductive lossesLow gate charge for fast power switchingCompliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/ECHalogen-free according to IEC 61249-2-21APPLICATIONSBattery Power ManagementORing FET/Load Switch

SMD-Schottky Barrier Rectifiers 40V 5A SMCFor surface mounted applicationsMetal to silicon rectifier, majority carrier conductionLow forward voltage drop Easy pick and placeHigh surge current capability

30V N-Channel MOSFETfeaturesAdvance Trench Process TechnologyHigh Density Cell Design for Ultra Low On-resistanceapplicationload switchPA switch

N-Channel Power MOSFETFEATURESsuper junction technologyHigh performance due to small figure-of-meritHigh ruggedness performanceHigh commutation performance100% UIL testedPb-free platingCompliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/ECHalogen-free according to IEC 61249-2-21APPLICATIONSpower supply�Lighting

1A Ultra Low Dropout Fixed Positive Voltage RegulatorDescriptionThe TS2940 series of fixed-voltage monolithic micro-power voltage regulators is designed for a wide range of applications. This device excellent choice of use in battery-power application. Furthermore, the quiescent current increases on slightly at dropout, which prolongs battery life. This series of fixed-voltage regulators features very low ground current (100uA Typ.) and very low drop output voltage (Typ. 60mV at light load and 600mV at 1A). This includes a tight initial tolerance of 1% typ., extremely good line regulation of 0.05% typ., and very low output temperature coefficient. This series is offered in 3-pin TO-263, TO-220, TO-252 & SOT-223 package.Features• Dropout voltage typically 0.6V @Io=1A• Output current up to 1A• Output voltage trimmed before assembly• -18V Reverse peak voltage• +30V Input over voltage protection• +60V Transient peak voltage• Internal current limit• Thermal shutdown protection

Transistor• 20 V N-channel amplification MOSFET• Enclosure: SOT-23

High-voltage PNP epitaxial planar transistor? Low saturation voltages? High breakdown voltage

N-Channel Power MOSFETFEATURESsuper junction technologyHigh performance due to small figure-of-meritHigh ruggedness performanceHigh commutation performance100% UIL testedPb-free platingCompliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/ECHalogen-free according to IEC 61249-2-21APPLICATIONSpower supply�LightingNote: MSL 3 (Moisture Sensitivity Level) per J-STD-020

N-Channel Power MOSFETapplicationPower Supply.�LightingNote: ''G'' denotes for Halogen- and Antimony-free as those whichcontain + Cl) and <1000ppm

100V N-Channel MOSFETfeaturesLow RDS(ON) 250mR (Max.)Low gate charge typical @ 11.1nC (Typ.)High performance trench technology

1.5-A negative regulator• Housing: TO-220

Transistor• 20 V N-channel amplification MOSFET• Enclosure: SOT-23

1.5-A positive regulator• Housing: TO-220

TSM231220-V N-channel enhancement type MOSFETFeaturesAdvanced trench process technologyHigh density cell design for extremely low on-state resistance

Schottky diodes/hot carrier diodesOptimised for fast switchingLow forward voltage drop

N-Channel Power MOSFETFEATURES�Robust high voltage terminationAvalanche energy specifiedDiode is characterized for use in bridge circuitsSource to Drain diode recovery time comparable to a discrete fast recovery diode.APPLICATIONpower supply�Lighting�Charger

30V N-Channel Power MOSFET