677 products were found matching your search for infineon in 1 shops:

BTS711L1, Smart High-Side Power SwitchDescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.Features• Overload protection• Current limitation• Short-circuit protection• Thermal shutdown• Overvoltage protection (including load dump)• Fast demagnetization of inductive loads• Reverse battery protection1)• Undervoltage and overvoltage shutdown with auto-restart and hysteresis• Open drain diagnostic output• Open load detection in ON-state• CMOS compatible input• Loss of ground and loss of Vbb protection• Electrostatic discharge (ESD) protection• AEC qualified• Green product (RoHS compliant)Application• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads• All types of resistive, inductive and capacitive loads• Replaces electromechanical relays and discrete circuits

MA5332MS , 200W Stereo, Integrated Class D AmplifierDescriptionThe MA5332MS offers the same or higher output power than monolithic alternatives without heatsink and 50% less footprint. This MCM (multi-chip module) solution integrates 2 channel PWM controller, high voltage gate driver, and 4 low RDS(ON) MOSFETs. Like its predecessor, IR43x2M, it includes standard Class D protection features for reliable operation over various environmental conditions. As a powerful upgrade to IR43x2M and other monolithic solutions, MA5332MS’ 7x7 mm PG- IQFN-42 package showcases the benefit of small footprint, high power density, and heatsink-less operation.Features• 2 channel analog input Class D audio amplifier in a small 7x7mm package• Very low RDS(ON) at 24.4 mOhm typical, enabling heatsink-less operation at 2x100W at 4Ohm• 95% efficiency Class D at 2x100W at 4Ohm• Split or single power supply capable• Differential or single-ended input• Multiple configuration options: 2xSE, BTL, PSE (Parallel Single-Ended)• Over-current, over-temperature and under-voltage protections with self-reset feature• Start/stop click noise reduction• Clip and Fault reporting outputsApplications• Multi-channel home theatre system• Studio monitor• Active speaker• Soundbar subwoofer• Marine amplifier• Aftermarket car audio system• General-purpose audio power amplifier

PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver circuit• Built in bias resistor (R1 = 4.7 kO)• Pb-free (RoHS compliant) package• Qualified according AEC Q101

MOSFET transistorN-channel40 V10 ASO-8

MOSFET transistorP-channel20 V4.3 ASO-8

BCR158... , PNP silicon digital transistorFeatures: • circuit, inverter, interface circuit, driver circuit.• Built-in bias resistor (R1=2.2 kOhm, R2=47 kOhm) • Pb-free (RoHS compliant) package• Qualified according to AEC Q101Delivery in complete industrial packaging (7 inch roll of 3000 pieces) possible, please contact our quotation department!

HEXFET® Power MOSFETapplicationsHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switched and High Frequency CircuitsbenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt Capabilitylead free

International Rectifier's third generation HEXFETs use advanced processing techniques to achieve extremely low on-resistance per silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an extremely efficient and reliable device for use in a wide range of applications. The TO-220 package is generally preferred for all commercial/industrial applications with power dissipation up to approximately 50 watts.The low thermal resistance and low cost of the TO-220 package contribute to its wide acceptance in the industry.Features• adavanced Process Technology• ultra Low On-Resistance• dual N-Channel MOSFET• surface Mount• available in Tape & Reel• dynamic dv/dt Rating• fast Switching

HEXFET power MOSFETThis HEXFET Power MOSFET uses the latest processing technology to achieve an extremely low switch-on resistance per silicon surface. Other features of this design include high switching speed and robust device design. These characteristics make this design an extremely efficient and reliable component for a wide range of applications.FeaturesAdvanced processing technologyExtremely low on-state resistanceFast switchingFully Avalanche-ratedLead-free

MOSFET transistorN/P-channel55 V4.7 A/3.4 ASO-8

MOSFET transistorN-channel30 V6.5 ASO-8

MOSFET transistorN/P-channel25 V3.5 A/2.3 ASO-8

MOSFET transistorN/P-channel30 V3.5 A/2.3 ASO-8

HEXFET® Power MOSFETfeaturesAdvanced Process Technologyultra low on resistance175°C Operating temperatureFast SwitchingRepetitive Avalanche Allowed up to Tjmaxlead freedescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Park is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dessipation levels up to 1.5 watts are possible in typical surface mount applications.Features• dynamic dv/dt rating• surface mount (IRFR0320)• Repetitive avalanche rated• straight lead (IRFU0320)• available in tape & reel• fast switching• ease of paralleling

Applications• high Efficiency Synchronous Rectification in SMPS• high Speed Power Switching• uninterruptible Power Supply• hard Switched and High Frequency CircuitsBenefits• improved Gate, Avalanche and Dynamic dV/dt Ruggedness• fully Characterized Capacitance and Avalanche SOA• enhanced body diode dV/dt and dI/dt Capability• Lead-Free

SIPMOS SMD low-power MOSFETFeaturesEnrichment modeLead-free and RoHS-compliantQualified to AEC Q101Halogen-free to IEC61249-2-21

HEXFET power MOSFETFeaturesImproved gate, avalanche and dynamic dv/dt robustnessFully characterised capacity and avalanche SOAImproved dv/dt and dl/dt capability of the body diodeLead-freeApplicationsHighly efficient synchronous rectification in SMPSUninterruptible power supplyHigh-speed power switchingHard-wired high-frequency switching

International Rectifier's third generation HEXFETs use advanced processing techniques to achieve extremely low on-resistance per silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an extremely efficient and reliable device for use in a wide range of applications. The TO-220 package is generally preferred for all commercial/industrial applications with power dissipation up to approximately 50 watts.The low thermal resistance and low cost of the TO-220 package contribute to its wide acceptance in the industry.Features• dynamic dv/dt assessment• repeated avalanche assessed• fast switching• simple parallel switching• simple drive requirements

Features• advanced Process Technology• key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications• low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications• low QG for Fast Response• high Repetitive Peak Current Capability for Reliable Operation• short Fall & Rise Times for Fast Switching• 175°C Operating Junction Temperature for Improved Ruggedness• repetitive Avalanche Capability for Robustness and Reliability• Class-D Audio Amplifier 300W-500W (Half-bridge)